Vertical Cavity Surface Emitting Laser for Operation at 1.5 µm with Integral AlGaInAs/InP Bragg mirrors

Linnik, M. ; Christou, A. (2001) Vertical Cavity Surface Emitting Laser for Operation at 1.5 µm with Integral AlGaInAs/InP Bragg mirrors. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract

The design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55 µm is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows one to select the optimum materials for highly reflective Bragg mirrors. The simulation of the designed VCSEL performance has been carried out by evaluation of the important laser characteristics such as threshold gain, threshold current density and external quantum efficiency.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Linnik, M.
Christou, A.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:33
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