Cryogenic Investigation of Current Collapse in AlGaN/GaN HFETS

Nuttinck, S. ; Pinel, S. ; Gebara, E. ; Laskar, J. ; Harris, M. (2003) Cryogenic Investigation of Current Collapse in AlGaN/GaN HFETS. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

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Abstract

Current collapse in AlGaN/GaN HFETs is investigated at low temperatures using a transient current monitoring technique. The carrier trapping and de-trapping mechanisms are studied, and two distinct relaxation mechanisms are observed. They are associated to the presence of two close deep energy levels in the bandgap.

Abstract

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