Transcapacitances and Bias Dependent Time Delay and Base Resistance Expressions for Accurate Large Signal Modeling of HBTs

Issaoun, A. ; Dousset, D. ; Kouki, A.B. ; Ghannouchi, F.M. (2003) Transcapacitances and Bias Dependent Time Delay and Base Resistance Expressions for Accurate Large Signal Modeling of HBTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

Transcapacitances and bias dependent total time delay and base resistance expressions for accurate modeling of heterojunction bipolar transistors (HBTs)are proposed.Small-signal equivalent circuit parameters are first extracted over the entire forward bias region using multi-bias S-parameter measurements.Relations taking into account the variation of the bias dependence of circuit elements on collector-emitter voltage and collector current are then developed.The resulting expressions are used to construct a large signal model,which is then tested and compared to a dedicated small-signal model and measurements.The developed expressions may be used to improve the accuracy of other large signal models.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Issaoun, A.
Dousset, D.
Kouki, A.B.
Ghannouchi, F.M.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:53
URI

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