Transcapacitances and Bias Dependent Time Delay and Base Resistance Expressions for Accurate Large Signal Modeling of HBTs

Issaoun, A. ; Dousset, D. ; Kouki, A.B. ; Ghannouchi, F.M. (2003) Transcapacitances and Bias Dependent Time Delay and Base Resistance Expressions for Accurate Large Signal Modeling of HBTs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
Full text available as:
[img]
Preview
PDF
Download (200kB) | Preview

Abstract

Transcapacitances and bias dependent total time delay and base resistance expressions for accurate modeling of heterojunction bipolar transistors (HBTs)are proposed.Small-signal equivalent circuit parameters are first extracted over the entire forward bias region using multi-bias S-parameter measurements.Relations taking into account the variation of the bias dependence of circuit elements on collector-emitter voltage and collector current are then developed.The resulting expressions are used to construct a large signal model,which is then tested and compared to a dedicated small-signal model and measurements.The developed expressions may be used to improve the accuracy of other large signal models.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Issaoun, A.
Dousset, D.
Kouki, A.B.
Ghannouchi, F.M.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:53
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^