InP HEMTs and HBVs for Low Noise and Ultra-High Speed:Device and Circuit Research at Chalmers University of Technology

Zirath, Herbert ; Grahn, Jan ; Rorsman, Niklas ; Mellberg, Anders ; Stake, Jan ; Angelov, I. ; Starski, Piotr (2003) InP HEMTs and HBVs for Low Noise and Ultra-High Speed:Device and Circuit Research at Chalmers University of Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

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Abstract

An overview is given of the Chalmers research activities in InP-based devices and circuits for very high-speed and low noise applications.Both InP HEMTs and circuit implementations are presented including 50 nm gate length devices and analog MMICs at F-band and W- band.We also present results from research on extremely low-noise InP HEMT amplifiers for cryogenic applications and HBV devices for THz generation.

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Documento relativo ad un convegno o altro evento (Atto)

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