Low Noise Metamorphic HEMTs with Reflowed Submicron T-Gate

Lien, Y. C. ; Chang, E. Y. ; Chang, H. C. ; Chu, L. H. ; Huang, K. W. ; Lee, H. M. ; Lee, C. S. ; Chen, S. H. ; Shen, P. T. (2003) Low Noise Metamorphic HEMTs with Reflowed Submicron T-Gate. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

A submicron T-gate fabricated using E-beam lithography and thermally reflow process was developed and was applied to the manufacture of the low noise metamorphic high electron-mobility transistors (MHEMTs).The In0.53 Al0.47 As/InGaAs MHEMT uses Inx Al1-x As as the buffer layer between GaAs substrate and the InP lattice-matched HEMT structure.The T-gate developed has a gate length of 0.13 µm formed by thermally reflowed technology.The fabricated MHEMT has a saturation drain current of 200 mA/mm and a transconductance of 750 mS/mm at VDS =1.2V.The noise figure for the 160 µm gate-width device is less than 1 dB and the associated gain is up to 14 dB at 18 GHz.The device demonstrates a cut-off frequency fT of 154 GHz and a maximum frequency fmax of 300 GHz.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Poster)
Autori
AutoreAffiliazioneORCID
Lien, Y. C.
Chang, E. Y.
Chang, H. C.
Chu, L. H.
Huang, K. W.
Lee, H. M.
Lee, C. S.
Chen, S. H.
Shen, P. T.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:55
URI

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