Carbon Doped InP/InGaAs Heterojunction Bipolar Transistors Grown By MOCVD

Deluca, P.M. ; Landini, B.E. ; Welser, R. E. (2001) Carbon Doped InP/InGaAs Heterojunction Bipolar Transistors Grown By MOCVD. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract

InGaAs/InP heterojunction bipolar transistors grown in a multi-wafer metal-organic chemicalvapor deposition system will be demonstrated.Excellent large and small area DC and RF results are obtained for single and double heterojunction structures. The large area DC current gain was increased by a factor of 3 at a given base sheet resistance via growth optimization. DHBT devices exhibit a current gain cut-off frequency of ft ~ 125 GHz and a unilateral gain cut-off frequency of fmax ~ 125 GHz.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Deluca, P.M.
Landini, B.E.
Welser, R. E.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:33
URI

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