A Globally-Continuous, Charge-Conservative, Non-linear Equivalent Circuit Model For RF MOSFETs

Ó hAnnaidh, Breandán ; Brazil, Thomas J. (2003) A Globally-Continuous, Charge-Conservative, Non-linear Equivalent Circuit Model For RF MOSFETs. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Salva citazione

Citato da

Full text disponibile come:

Anteprima

Documento PDF
Download (374kB) | Anteprima

Abstract

A non-linear equivalent circuit model for MOSFETs valid for DC, small and large-signal sim-ulations of high frequency circuit design is presented. The model is valid for a wide range of bias conditions and is globally continuous. Capacitances are derived from a single charge model and charge conservation is taken into account. Simulations of the model, following parameter extraction, are validated by comparisons with experimental data.

Abstract

Tipologia del documento

Documento relativo ad un convegno o altro evento (Atto)

Autori