Thermal Stability of Beryllium Doped InP/InGaAs Single and Double HBTs Grown by Solid Source Molecular Beam Epitaxy

Sexton, James ; Missous, Mohammed (2003) Thermal Stability of Beryllium Doped InP/InGaAs Single and Double HBTs Grown by Solid Source Molecular Beam Epitaxy. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
Full text disponibile come:
[thumbnail of G_09_05.pdf]
Anteprima
Documento PDF
Download (149kB) | Anteprima

Abstract

Heavily Beryllium doped (~1.5 ×10 19 cm -3 ) InP/InGaAs single heterojunction bipolar transistors (SHBTs) and double heterojunction bipolar transistors (DHBTs) have been successfully grown by solid source molecular beam epitaxy (SSMBE). The epitaxial growth was performed on a VG 90H MBE system with 100mm wafer growth capability. The novelty of this process was the use of dimeric phosphorus generated from a gallium phosphide (GaP) decomposition source which permitted growth at fairly low temperature (420 o C) while conserving extremely high quality materials. Thermal stability studies were then performed on the heavily doped HBTs using postgrowth annealing in an N2 ambient. The devices were annealed over a temperature range of 350-550 o C for 15 minutes prior to fabrication. The relatively low growth temperature of ~420 o C and the use of stoichiometric conditions for both the arsenides and phosphide materials produced remarkably thermally stable, high-gain SHBTs and DHBTs up to annealing temperatures of 550 o .

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Sexton, James
Missous, Mohammed
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:58
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^