High frequency properties of Si/SiGe n-MODFETs: dependence on gate length and temparture

Enciso, M. ; Aniel, F. ; Giguerre, L. ; Crozat, P. ; Adde, R. (2001) High frequency properties of Si/SiGe n-MODFETs: dependence on gate length and temparture. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract

The HF performances of n-type strained Si channel Modulation Doped Field Effect Transistors (MODFETs) with 0.118 µm, 0.130 µm and 0.250 µm gate lengths are reported at 300 K and 50 K. At 300K, intrinsic cut-off frequencies fTi are 65 GHz, 58 GHz, 37 GHz and maximum oscillation frequencies fMAX are 76 GHz ,60 GHz, and 100 GHz , respectively. The 0.130 µm device presents at 300 K a record intrinsic transconductance of 715 mS/mm and excellent noise performances with a de-embedded Minimum Noise Figure NFmin of 0.3 dB at 2.5 GHz. The variation of fMAX underlines the importance of the device parasitic resistances.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Enciso, M.
Aniel, F.
Giguerre, L.
Crozat, P.
Adde, R.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:35
URI

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