On wafer thermal investigation of gaas-based microwave transistors by a thermoelectric system

Sannino, M. ; Caddemi, A. ; Donato, N. (2001) On wafer thermal investigation of gaas-based microwave transistors by a thermoelectric system. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract

On wafer thermal analysis is of basic importance to assess key aspects of the performance and the reliability of microwave devices and circuits in a critical operation environment. To this aim, we have designed and realized an efficient Peltier-stage thermal chuck for on wafer microwave probe stations working over the 220 K – 320 K temperature range. Extensive testing has enlightened its features in terms of fast settling time and accurate temperature control. The performance of the system has been exploited in measurement of I-V curves, scattering parameters and noise figure up to 40 GHz of several microwave devices. We here describe the details of the measurement system and present the results of our most recent experimental activity.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Sannino, M.
Caddemi, A.
Donato, N.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:35
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