Direct On-Wafer Non-Invasive Thermal Monitoring of AlGaN/GaN Power HFETs Under Microwave Large Signal Conditions

Nuttinck, S. ; Mukhopadhyay, R. ; Loper, C. ; Singhal, S. ; Harris, M. ; Laskar, J. (2005) Direct On-Wafer Non-Invasive Thermal Monitoring of AlGaN/GaN Power HFETs Under Microwave Large Signal Conditions. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, 2004, Amsterdam.
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Abstract

For the first time, we report direct on-wafer noninvasive temperature distribution measurements of AlGaN/GaN HFETs grown on Si substrates under microwave large-signal conditions. An infrared camera and a load-pull measurement system coupled to a probe station enable us to produce surface temperature maps with micronic resolution. Results include the impact of the RF drive, differences between RF and DC drive, as well as impact of reduced power added efficiency on the surface temperature of the device.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Nuttinck, S.
Mukhopadhyay, R.
Loper, C.
Singhal, S.
Harris, M.
Laskar, J.
Subjects
DOI
Deposit date
21 Oct 2005
Last modified
16 May 2011 11:38
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