Analysis of Drain Lag and Power Compression in GaN MESFET

Horio, K. ; Yonemoto, K. (2004) Analysis of Drain Lag and Power Compression in GaN MESFET. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

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Abstract

Two-dimensional transient simulation of a GaN MESFET is performed in which deep levels in a semiinsulating buffer layer is considered. It is shown that the drain voltage VD is raised, the drain current overshoot the steady-state value, and when VD is lowered, the drain current remains at a low value for some periods, showing drain lag behavior. This drain lag is shown to become a cause of so-called power compression in the GaN MESFET.

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