Fully Differential 2 GHz 2.7V 4th-Order Low-Noise Active Bandpass Filter on Silicon

Sassi, Zoheir ; Barelaud, Bruno ; Billonnet, L. ; Jarry, Bernard ; Marie, Hervé ; De La Torre, Alain ; Nguyen Trieu, Luan Le ; Gamand, Patrice (2004) Fully Differential 2 GHz 2.7V 4th-Order Low-Noise Active Bandpass Filter on Silicon. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

In this paper we present a 2.7 V fully differential fourth-order bandpass filter developed and realised around four inductors electrically coupled using MOSFETs. Varactors are used for frequency tuning. An amplifier is cascaded at the input for noise and impedance matching. Philips QUBIC4 Si BiCMOS technology is used [1].

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Sassi, Zoheir
Barelaud, Bruno
Billonnet, L.
Jarry, Bernard
Marie, Hervé
De La Torre, Alain
Nguyen Trieu, Luan Le
Gamand, Patrice
Subjects
DOI
Deposit date
15 Jun 2005
Last modified
17 Feb 2016 14:09
URI

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