Design Procedure and Performance of two 0.5-20 GHz GaAs PHEMT MMIC Matrix Distributed Amplifier for EW Applications

Lamesa, Alessandro ; Giolo1, Giancarlo ; Limiti, Ernesto (2004) Design Procedure and Performance of two 0.5-20 GHz GaAs PHEMT MMIC Matrix Distributed Amplifier for EW Applications. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

Two monolithic matrix amplifiers for ECM and ESM military equipment have been designed and realized using 0.25 m GaAs PHEMT technology from UMS. Design trade-offs and performances are discussed detail. The effects of the biasing network, termination load and total gate periphery on the performance of the amplifiers were considered for optimum design. The first amplifier , designed for gain flatness and noise figure yields gain of 19 1 dB and a typical noise figure of 4 dB. The second unit exhibits a positive linear gain slope from 16 dB to 20 dB. Output power at 1 dB compression point is +12 dBm. The die size and bandwidth of each MMIC is 7 mm2 and 0.5-20 GHz respectively.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Lamesa, Alessandro
Giolo1, Giancarlo
Limiti, Ernesto
Settori scientifico-disciplinari
DOI
Data di deposito
15 Giu 2005
Ultima modifica
17 Feb 2016 14:10
URI

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