Recent Developments and Trends in GaN HFETs

Théron, D. ; Gaquière, C. ; De Jaeger, J.C. ; Delage, S. L. (2004) Recent Developments and Trends in GaN HFETs. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

This paper reviews the main challenges and results concerning GaN HFET research and development in Europe. Today several actors are working to allow the emergence of an European source for this technology. The activity sweeps all R&D fields from material growth to circuit realization and reliability.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Théron, D.
Gaquière, C.
De Jaeger, J.C.
Delage, S. L.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Giu 2005
Ultima modifica
17 Feb 2016 14:16
URI

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