Jo, Seong June ; Ihn, Soo-Ghang ; Kim, Tae-Woo ; Yee, Ki-Ju ; Hwang, Moon-Seop ; Lee, Dong-Han ; Song, Jong-In
(2005)
Electrical and structural properties ofLow-temperature-grown in0.53Ga0.47ason GaAs using an inGaAlAs metamorphic buffer.
In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract
Electrical and structural properties of low-temperature-grown In0.53Ga0.47As (LT-InGaAs) on GaAs using an InGaAlAs metamorphic buffer (M-buffer) were studied. Dependence of carrier lifetime of the LT-InGaAs on post thermal annealing was also investigated. Utilization of residual dislocation in the LT-InGaAs on the M-buffer was effective in reducing the carrier lifetime, producing the carrier lifetime of 2.14 ps that is comparable to that of the Be-doped LT-InGaAs.
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