A MEMS capacitor with improved RF power handling capability

Girbau, D. ; Otegi, N. ; Pradell, L. ; Lázaro, A. (2005) A MEMS capacitor with improved RF power handling capability. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

This paper presents a structure of MEMS capacitor providing independence of its nominal capacity and tuning range from the applied RF signal power. The capacitor includes a third parallel plate acting as an electrode to which an extra DC voltage is applied to compensate for the self-actuation effect. This means that the device can be used in many applications working under different RF power conditions, without changing its performance – nominal capacity and tuning range –. Capacitor design concept and simulations are provided. It has been manufactured using a standard surface-micromachining MEMS technology. Experimental results are presented, validating the concept and demonstrating its feasibility and advantages.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Girbau, D.
Otegi, N.
Pradell, L.
Lázaro, A.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:21
URI

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