Frequency domain-based extraction method of one-port device’s non-linear state functions from large-signal measurements

Martín-Guerrero, T.M. ; Camacho-Peñalosa, C. (2005) Frequency domain-based extraction method of one-port device’s non-linear state functions from large-signal measurements. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

A novel frequency domain-based method for the extraction of one-port device’s non-linear constitutive relations directly from vector large-signal measurements is presented. A distinctive characteristic of the method is that it provides directly the charge-voltage state-function, without the need to perform the integration of the capacitance-voltage function as required by its time domain-based counterpart. The capabilities of the method are demonstrated by extracting the non-linear state-functions of a microwave diode from large-signal data generated by harmonic balance analysis, and the non-linear gate-source state-functions of a HEMT device under ‘cold-FET’ bias conditions from measured data.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Martín-Guerrero, T.M.
Camacho-Peñalosa, C.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:22
URI

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