Optimization of the noise resistance of MESFET's and hemt's for CAD of microwave low-noise amplifiers

Caddemi, A. ; Sannino, M. (1997) Optimization of the noise resistance of MESFET's and hemt's for CAD of microwave low-noise amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract

Among the noise parameters expressed in the reflection coefficient form ( Fo, IFOI, /Fo and rn ), the noise resistance rn is of critical importance lo the design of low-noise receivers. Very low values of rn allow for optimizing the performance of broad band amplifiers in receiver front-ends. We here present an analysis performed on typical circuit models of FET's which was aimed at assessing the key elements influencing the behavior of rn at microwave frequencies. We found that the noise performance can be improved by tuning the value of the input (gate, source) inductances which are responsible of the U shaped curves typically observed for rn in MESFET's and HEMT's.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Caddemi, A.
Sannino, M.
Settori scientifico-disciplinari
DOI
Data di deposito
23 Nov 2005
Ultima modifica
17 Feb 2016 14:22
URI

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