Abstract

We present a fully monolithically integrated push-push oscillator fabricated in a production-near SiGe: C bipolar technology. The oscillator out put frequency can be varactor tuned from 80.6 GHz to 82.4 GHz. In this frequency range the measured output power is 3.5±0.4 dBm while the measured single sideband phase noise is less than−105dBc/Hz at 1MHz off set frequency. To our knowledge this phase noise level is the lowest one reported in literature so far for an VCO in this frequency band. The transistors used in this work show a maximum transit frequency fT= 200GHz and a maximum frequency of oscillation fmax =275GHz. For the passive circuitry transmission - line components, MIM-capacitors and integrated resistors are used.