Sleiman, A. ; Rossi, L. ; Di Carlo, A. ; Tocca, L. ; Bonfiglio, A. ; Brunori, M. ; Lugli, P. ; Zandler, G ; Meneghesso, G. ; Zanoni, E. ; Canali, C. ; Cetronio, A. ; Lanzieri, M. ; Peroni, M.
(1999)
Experimental and theoretical studies of near-breakdown phenomena in GaAs-based heterostructure FETs.
In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
Full text available as:
Preview |
PDF
Download (1MB) | Preview |
Abstract
We have investigated electrical and optical phenomena related to impact ionization in the near breakdown regime of heterostructure FETs. The experimental analysis is based on electroluminescence spectroscopy correlated to minority carrier gate current measurements. Such experiments are interpreted by means of Monte Carlo simulations.
Abstract
Other metadata
Downloads
Downloads
Staff only:
