AlGaInN power transistors: status and prospects

Zolper, J. C. (1999) AlGaInN power transistors: status and prospects. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

InN, GaN, A1N and their alloys were first studied in the 1960's for application to short wavelength emitters and for high power/high temperature electronics. These efforts languished due to the lack of a bulk substrate technology and the inability to produce low defect and low impurity heteroepitaxy films. In light of this, the compound semiconductor community moved on to Arsenide- and Phosphide-based materials that resulted in the device technologies now driving microwave wireless communications and many military electromagnetic systems. AlGalnN materials, however, are now poised to challenge the conventional III-V semiconductors for power generation, at least up to K-band, as a result of drastic material improvements driven, initially, by photonic applications. In this talk, the status of AlGaN/GaN high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) will be presented. Ongoing and future work to increase the operating frequency and output power will also be addressed.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
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AutoreAffiliazioneORCID
Zolper, J. C.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:27
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