25W L-band power module for space applications

Darbandi, A. ; Buret, H. ; Michard, F. ; Zoyo, M. (1999) 25W L-band power module for space applications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

A high efficient, low distortion L-band power module using a linear and non-linear models of the HFET devices has been developed. Single stage hybrid amplifier fabricated with 4x18mm gate width HFET exhibits an output power of 43.8dBm, a linear gain of 17dB and an associated PAE of 60% at 1.5GHz. These excellent results are performed by developing an accurate non-linear model of the chip device and optimizing the matching networks of the amplifier.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Darbandi, A.
Buret, H.
Michard, F.
Zoyo, M.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:27
URI

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