A new 2-D GaAs MESFETs model based on a very accurate velocity - field expression

Bobbo, B. M. ; Giorgio, A. ; Passaro, V. M. N. ; Perri, A. G. ; Pesare, M. (1999) A new 2-D GaAs MESFETs model based on a very accurate velocity - field expression. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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Abstract

A new physical model for GaAs MESFET drain current and gate capacitance based on the Chang-Fetterman velocity-electric field model, is presented. Accurate analytical expressions for the 2-D channel potential in the saturation region are adequately employed and mathematically manipulated in order to develop a 2-D C-V physical MESFET model without the main approximations used up to now in the previous physical models.

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