DC – 65 GHz characterization of nanocrystalline diamond leaky film for reliable RF MEMS switches

Chee, Joolien ; Karru, Ratnakar ; Fisher, Timothy S. ; Peroulis, Dimitrios (2005) DC – 65 GHz characterization of nanocrystalline diamond leaky film for reliable RF MEMS switches. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

This paper reports on the growth, patterning, and characterization of plasma-enhanced chemical vapor deposition (PECVD) thin diamond film for DC-65 GHz applications. Nanocrystalline films are successfully demonstrated with an average grain size of less than 60 nm that can replace conventional low-quality dielectrics in RF MEMS switches. In addition to their excellent surface properties, the diamond film has negligible RF loss up to at least 65 GHz, but non-zero DC conductivity of approximately 0.2 μS/m that allows the film to provide a conductive path for potential trapped charges. Such films are envisioned to be integrated in today’s capacitive RF MEMS switches that suffer from charge-induced stiction.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Chee, Joolien
Karru, Ratnakar
Fisher, Timothy S.
Peroulis, Dimitrios
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:30
URI

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