del Alamo, J. A. ; Somerville, M. H. ; Blanchard, R. R.
(1998)
Millimeter-wave power InP HEMTs: challenges and prospects.
In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract
At this time, GaAs PHEMTs exhibit higher power output than InP HEMTs at 60 and 94 GHz. InP HEMTs, however, feature power-added efficiency values that exceed GaAs PHEMTs by about 5 to 20 percentage points at 94 GHz. As a consequence, InP HEMTs remain a superior candidate for millimeter-wave power applications. The reason for the inferior output power of InP HEMTs lies in their relatively small on-state and off-state breakdown voltages. This paper reviews the state of the art of millimeter-wave power HEMT technology as well as recent advances in understanding of breakdown phenomena. It also discusses the prospects and challenges facing InP HEMTs in performance, reliability and low-cost manufacturing.
Abstract
At this time, GaAs PHEMTs exhibit higher power output than InP HEMTs at 60 and 94 GHz. InP HEMTs, however, feature power-added efficiency values that exceed GaAs PHEMTs by about 5 to 20 percentage points at 94 GHz. As a consequence, InP HEMTs remain a superior candidate for millimeter-wave power applications. The reason for the inferior output power of InP HEMTs lies in their relatively small on-state and off-state breakdown voltages. This paper reviews the state of the art of millimeter-wave power HEMT technology as well as recent advances in understanding of breakdown phenomena. It also discusses the prospects and challenges facing InP HEMTs in performance, reliability and low-cost manufacturing.
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DOI
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16 Feb 2006
Last modified
17 Feb 2016 14:33
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Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:33
URI
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