Abstract

The demonstrated potential of SiGe is reviewed and a performance and cost effective production technology SiGel is presented. This process is oriented to RF-solutions between 1 and 10 GHz, including all the active and passive devices needed for those applications. Transistors with 50 GHz fT and fmax are complemented by 30 GHz fT, 6 V Uceo transistors for power amplifiers showing a power added efficiency of 60 %. The manufacturability and reliability of SiGel is demonstrated and as first product a DECT frontend IC is shown with a noise figure of 1.6 dB for the LNA , and 28 dBm output power for the PA with up to 47% PAE, measured on packaged devices at 1.9 GHz.