Abstract

A new modeling approach for electron devices up to millimeter-wave frequencies is proposed. It exploits a previously proposed distributed approach with the aim of deriving a more computationally efficient model still preserving good accuracy. In particular, a new electron device model based on a “single active device” and a “distributed description of the parasitic structure” is derived, which can easily be identified through conventional scattering parameter measurements and electromagnetic simulations. Preliminary validation results are provided in the paper.