Abstract

While InP and the related (lattice matched) compounds are now well established in long wavelength (1.3 - 1.55 um) optoelectronics owing to their unmatched light emission properties, these materials are still fighting for a niche in microelectronics. InP and In0.53Ga0.47As, with a composition lattice matched to InP, obviously exhibit very attractive electronic transport properties, with respect to Si and GaAs. However the maturity of InP technology has been trailing considerably GaAs development, so that InP microelectronic devices and ICs are still more at the research and development stage than ready for large scale production. This paper is intended to show how the current progress in InP and related materials growth and process technologies now allows to benefit from their intrinsic electronic properties for the fabrication of high performance devices, ICs and OEICs.