A straightforward method for determining SiGe HBTs intrinsic elements of hibrid PI and TEE small-signal circuit models for multibias operation

Zamanillo, J.M. ; García, J.A. ; Mediavilla, A. ; Tazón, A. ; Pérez-Vega, C. (2000) A straightforward method for determining SiGe HBTs intrinsic elements of hibrid PI and TEE small-signal circuit models for multibias operation. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

A new method to simultaneously determine the complete Tee and hybrid Pi equivalent circuit parameters of the SiGe HBT including parasitic intrinsic base resistance, is presented. This approach employs analytically derived expressions and is based on the analysis of measured scattering parameters over an adequate frequency range. This paper shows that a one-to-one correspondence exists between Tee and Pi topologies and very good fit between measured and simulated scattering parameters in the frequency range between 0.05 to 50 GHz is obtained.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Zamanillo, J.M.
García, J.A.
Mediavilla, A.
Tazón, A.
Pérez-Vega, C.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:39
URI

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