Light emission spectra of commercial pseudomorphic HEMTs biased in the impact ionization regime

Cova, Paolo ; Chioato, Elena ; Conti, P. ; Dall'Aglio, Sandra ; Fantini, F. ; Manfredi, Manfredo ; Menozzi, Roberto ; Necchi, Riccardo (1994) Light emission spectra of commercial pseudomorphic HEMTs biased in the impact ionization regime. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract

The aim of this investigation is to study hot electron phenomena leading to impact ionization and light emission in commercial InGaAs-channel pseudomorphic HEMTs. Optical measurements have been performed at several temperatures by rneans of a single-photon counting technique in the range 1.1 eV - 3.0 eV, while biasing the devices in the impact ionization regime. The observed spectra show a sharp peak that denotes band-to-band recombinations of cold carriers and a high energy tail corresponding to hot electron transitions.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Cova, Paolo
Chioato, Elena
Conti, P.
Dall'Aglio, Sandra
Fantini, F.
Manfredi, Manfredo
Menozzi, Roberto
Necchi, Riccardo
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:42
URI

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