Optimization of InGaAsP-based BRAQWET heterostructures

Bava, G.P. ; Debernardi, P. ; Autore, G. ; Campi, D. (1994) Optimization of InGaAsP-based BRAQWET heterostructures. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
Full text available as:
[thumbnail of GAAS_94_083.pdf]
Preview
PDF
Download (1MB) | Preview

Abstract

A new class of optical switching structures has been recently proposed, the barrier resevoir and quantum well electron transfer structures (BRAQWETS), which are based on the voltage-control transfer of electrons in multiple-quantum wells. This type of modulators provides stronger electro-absorption and refraction than structures based on the quantum confined Stark effect, although the optical confinement is smaller due to the necessarily limited number of quantum wells. The purpose of this presentation is to investigate the fabrication and the basic physics of InP-based BRAQWET structures toward optimization of device performances.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Bava, G.P.
Debernardi, P.
Autore, G.
Campi, D.
Subjects
DOI
Deposit date
17 Feb 2006
Last modified
17 Feb 2016 14:44
URI

Other metadata

Downloads

Downloads

Staff only: View the document

div>
^