Abstract

The noise power spectral density of submicron n+nn+ InP diode loaded by a resistor R is investigated making use of a Monte Carlo particle technique and a closed hydrodynamic approach. We observe a peak in the spectrum which is caused by the spontaneous formation of electron accumulation layers. Furthermore, the drift of these layers through the n-region is monitored for biasing conditions above threshold for microwave generation. The frequency of the noise peak is shown to correspond to the highest generation frequency at the given R.