Melczarsky, Ilan ; Lonac, Julio A. ; Filicori, Fabio
(2006)
Electrical measurement of the junction temperature
and thermal resistance of HBTs.
IEEE Microwave and Wireless Components Letters, 16
(2).
pp. 78-80.
ISSN 1531-1309
Full text available as:
![[thumbnail of 01588943.pdf?tp=]](https://amsacta.unibo.it/style/images/fileicons/application_pdf.png) |
PDF
License: Creative Commons: Attribution-Noncommercial 3.0 (CC BY-NC 3.0) Download (155kB) |
Official URL: http://ieeexplore.ieee.org/iel5/7260/33486/01588943.pdf?tp=&arnumber=1588943&isnumber=33486
Abstract
A simple method is proposed to derive the junction temperature and the bias- and temperature-dependent thermal resistance of heterojunction bipolar transistors (HBTs) using a radio frequency (RF) signal. The method exploits the thermal dependence of the current gain of a transistor whose dissipated power is modified by applying an RF signal. The new method is used to derive the junction temperature and thermal resistance of a power HBT. The results are compared with state-of-the-art techniques.
Abstract
Other metadata
Downloads
Downloads
Staff only:
