Abstract

Large-signal dynamic modelling of III-V FETs cannot be simply based on de i/v characteristics, when accurate performance prediction is needed. In fact, dispersive phenomena due to self-heating and/or traps (surface state densities and deep level traps) must be taken into account since they cause important deviations in the dynamic drain current. In this paper, a recently proposed large-signal i/v measurement setup is exploited to extract an empirical model for lowfrequency dispersive phenomena in microwave electron devices. This i/v model is then embedded into a microwave large-signal PHEMT model. Eventually, a Ka-band highly linear power amplifier, designed by Ericsson using the Triquint GaAs 0.25pm PHEMT process, is used for model validation. Excellent intermodulation distortion predictions are obtained with different loads despite the extremely low power level of IMD products involved. This entitles the proposed model to be also used in the PA design process instead of conventional loadpull techniques whenever the high-linearity specifications play a major role.