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Santarelli, A. ; Filicori, F. ; Vannini, G. ; Rinaldi, P.
(1998)
'Backgating' model including self-heating for low-frequency dispersive effects in III-V FETs.
Electronics Letters, 34
(20).
pp. 1974-1976.
ISSN 0013-5194
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URL ufficiale: http://ieeexplore.ieee.org/iel4/2220/15589/00722063.pdf?tp=&arnumber=722063&isnumber=15589
Abstract
A new approach is proposed which takes into account both traps and thermal phenomena for the modelling of deviations between static and dynamic drain current characteristics in III-V field effect transistors. The model is based on the well-known `backgating' concept and can easily be identified on the basis of conventional static drain current characteristics and small-signal, low-frequency S parameters. Experimental results confirm the accuracy of the proposed model
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