Low Noise and Power Metamorphic HEMT Devices and Circuits with X=30% to 60% InxGaAs Channels on GaAs Substrates

Whelan, C.S. ; Marsh, P.F. ; Lardizabal, S.M. ; Hoke, W.E. ; McTaggart, R.A. ; Kazior, T.E. (2000) Low Noise and Power Metamorphic HEMT Devices and Circuits with X=30% to 60% InxGaAs Channels on GaAs Substrates. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

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Abstract

Metamorphic HEMTs (MHEMTs) are becoming the device of choice for low cost millimeter-wave applications, where a high indium content channel is necessary for high performance. This paper will review the material properties, the processing, and the device and amplifier performance of metamorphic HEMTs with 30% to 60% indium channel content, with a focus on work done at Raytheon RF Components. 1.4W of output power at 44 GHz have been realized.

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