Industrial GaInP/GaAs Power HBT MMIC Process

Blanck, H. ; Riepe, K.J. ; Doser, W. ; Auxemery, P. ; Pons, D. (2000) Industrial GaInP/GaAs Power HBT MMIC Process. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

UMS has developed an industrial power HBT process especially dedicated to power MMICs in the 10GHz frequency range. The process has been qualified and meets the very demanding specifications required for X-Band high power amplifiers. Aside from the obvious RF performances, this includes the demonstration of the necessary stability and reproducibility of the process, associated with state-of-art reliability. It is important to note that the later has been achieved without affecting the high frequency capability of the devices, and demonstrated directly on high power transistors. Thanks to its intrinsic qualities this process can naturally also be used for other applications, like low phase noise voltage controlled oscillators, and power amplifiers at lower frequencies (for mobile phones for instance).

Abstract
Document type
Conference or Workshop Item (Poster)
Creators
CreatorsAffiliationORCID
Blanck, H.
Riepe, K.J.
Doser, W.
Auxemery, P.
Pons, D.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:43
URI

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