Abstract

Recently proposed,general-purpose mathematical approaches,such as the Finite Memory Model (FMM)[6 ]and the Non-linear Discrete Convolution Model (NDC)[7 ],are used for the nonlinear modeling of electron devices. Both models derive from the same theoretical approach and are identi fied on the basis of conventional DC (and/or pulsed characteristics)and small-signal differential parameter measurements. The implementation of the two models in the framework of the Agilent-ADS CAD package is described in the paper and a wide experimental validation,including small-and large-signal results,is presented for GaAs- MESFET,and PHEMT devices.