Design and Fabrication of 77GHz HEMT Mixer Modules using Experimentally Optimized Antipodal Finline Transitions

Kim, Dong-Wook ; Paek, Seung-Won ; Lee, Jae-Hak ; Jeon, Kye-Ik ; Lim, Chae-Rok ; Kwon, Young-Woo ; Chung, Ki-Woong (2000) Design and Fabrication of 77GHz HEMT Mixer Modules using Experimentally Optimized Antipodal Finline Transitions. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

77GHz PHEMT gate mixer module and resistive mixer module were fabricated for automotive applications using LG-CIT low noise PHEMT process and WR12-to-microstrip antipodal finline transitions. Experimental optimization of the finline transitions was attempted for wideband operation and low insertion loss by adjusting geometrical design parameters. The average insertion loss was measured o be 0.74dB per transition in 75~90GHz. Thefabricated gate mixer module and the resistive mixer module showed very good conversion loss of 2dB and 10.3dB, respectively, including finline transition loss and IF cable loss, which were very competitive performances.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Kim, Dong-Wook
Paek, Seung-Won
Lee, Jae-Hak
Jeon, Kye-Ik
Lim, Chae-Rok
Kwon, Young-Woo
Chung, Ki-Woong
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:43
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