Noise performance of a ground gate wideband MMIC amplifier

Zirath, Herbert ; Sakalas, Paulius ; Miranda, Jose Miguel (2000) Noise performance of a ground gate wideband MMIC amplifier. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

A broadband ground gate amplifier was designed, fabricated and characterized. Noise parameters of the intrinsic HFETs were measured and simulated by using Pospieszalski noise model. Extracted drain and gate temperatures were used for the characterization of the amplifier noise properties. An input match better than -20 dB in a wide band from 2 to 6 GHz and -10 dB from 1-13 GHz with corresponding 11 dB gain was obtained. NF min of 3 dB was found experimentally at room temperature. A dc power dissipation of less than 20 mW is possible to obtain with this device technology. The total chip area is 2x1.5 mm 2. The active circuit area is less than 1 mm 2. We have simulated amplifiers rf and noise performance with the wider gate HFET at the input.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Poster)
Autori
AutoreAffiliazioneORCID
Zirath, Herbert
Sakalas, Paulius
Miranda, Jose Miguel
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:46
URI

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