Pulsed power operation of commercially available silicon carbide mesfets

Walden, Mark G. (2001) Pulsed power operation of commercially available silicon carbide mesfets. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract

Sample devices of commercially available SiC MESFETs were measured under pulsed conditions. The results show significant improvements over traditional III-V devices measured under the same conditions. The measurements indicate that SiC devices may have several advantages for use in pulsed applications such as Phased Array Radar.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Walden, Mark G.
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DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:33
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