Characterizing the Linearity Sweet-Spot Evolution in FET Devices

Malaver, Emigdio ; Garcıa, Jose Angel ; Tazon, Antonio ; Mediavilla, Angel (2003) Characterizing the Linearity Sweet-Spot Evolution in FET Devices. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

In this paper,a complete characterization of the linearity sweet-spot evolution in MESFET/HEMT devices is presented. A global experimental extraction of the I ds(V gs,V ds) Taylor series coefficients is used tointroduce the small-signal behavior in the linear and saturated regions. The possibility of taking advantage of these points in different applications is also discussed. For the first time, a characterization of the influence of both bias voltages on the device transition towards the large-signal regime is presented. Finally, a technique for improving the linearity-efficiency tradeoff in a class B/C power amplifier (PA) is introduced.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Malaver, Emigdio
Garcıa, Jose Angel
Tazon, Antonio
Mediavilla, Angel
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:53
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