Characterizing the Linearity Sweet-Spot Evolution in FET Devices

Malaver, Emigdio ; Garcıa, Jose Angel ; Tazon, Antonio ; Mediavilla, Angel (2003) Characterizing the Linearity Sweet-Spot Evolution in FET Devices. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

In this paper,a complete characterization of the linearity sweet-spot evolution in MESFET/HEMT devices is presented. A global experimental extraction of the I ds(V gs,V ds) Taylor series coefficients is used tointroduce the small-signal behavior in the linear and saturated regions. The possibility of taking advantage of these points in different applications is also discussed. For the first time, a characterization of the influence of both bias voltages on the device transition towards the large-signal regime is presented. Finally, a technique for improving the linearity-efficiency tradeoff in a class B/C power amplifier (PA) is introduced.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Malaver, Emigdio
Garcıa, Jose Angel
Tazon, Antonio
Mediavilla, Angel
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:53
URI

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