Substrate Effects in SiGe HBT Modeling

Johansen, Tom K. ; Vidkjaer, Jens ; Krozer, Viktor (2003) Substrate Effects in SiGe HBT Modeling. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

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Abstract

This paper reports on a direct parameter extraction method for SiGe Heterojunction Bipolar Transistors (HBT’s). Unlike previous reported direct parameter extraction methods the method presented here can be used to determined the elements associated with the parasitic substrate transistor action. The method is experimentally verified on a 0.8 m 35GHz SiGe HBT in the frequency range from 45 MHz-26.5 GHz.

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