A Low-Voltage Fully-Integrated 4.5-6-GHz CMOS Variable Gain Low Noise Amplifier InGaP

Tsai, Ming-Da ; Liu, Ren-Chieh ; Lin, Chin-Shen ; Wang, Huei (2003) A Low-Voltage Fully-Integrated 4.5-6-GHz CMOS Variable Gain Low Noise Amplifier InGaP. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

A 4.5-6 GHz CMOS low-voltage wideband variable gain low noise amplifier (VGLNA)with wide gain-control range has been demonstrated in this paper. The VGLNA,operating at a supply voltage as low as 1 V, achieves a small signal gain of 20 dB and 3-dB bandwidth of 1.5 GHz with good return losses.The noise figure is 3.5 dB at 5.5 GHz.A figure-of-merit for gain efficiency (Gain/PDC)of 1.23 dB/mW is achieved,which is believed to be the best among reported results for a CMOS VGLNA operating at multi-GHz frequency.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Tsai, Ming-Da
Liu, Ren-Chieh
Lin, Chin-Shen
Wang, Huei
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:56
URI

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