Sexton, James ; Missous, Mohammed
(2003)
Thermal Stability of Beryllium Doped InP/InGaAs Single and Double HBTs Grown by Solid Source Molecular Beam Epitaxy.
In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract
Heavily Beryllium doped (~1.5 ×10 19 cm -3 ) InP/InGaAs single heterojunction bipolar transistors (SHBTs) and double heterojunction bipolar transistors (DHBTs) have been successfully grown by solid source molecular beam epitaxy (SSMBE). The epitaxial growth was performed on a VG 90H MBE system with 100mm wafer growth capability. The novelty of this process was the use of dimeric phosphorus generated from a gallium phosphide (GaP) decomposition source which permitted growth at fairly low temperature (420 o C) while conserving extremely high quality materials. Thermal stability studies were then performed on the heavily doped HBTs using postgrowth annealing in an N2 ambient. The devices were annealed over a temperature range of 350-550 o C for 15 minutes prior to fabrication. The relatively low growth temperature of ~420 o C and the use of stoichiometric conditions for both the arsenides and phosphide materials produced remarkably thermally stable, high-gain SHBTs and DHBTs up to annealing temperatures of 550 o .
Abstract
Heavily Beryllium doped (~1.5 ×10 19 cm -3 ) InP/InGaAs single heterojunction bipolar transistors (SHBTs) and double heterojunction bipolar transistors (DHBTs) have been successfully grown by solid source molecular beam epitaxy (SSMBE). The epitaxial growth was performed on a VG 90H MBE system with 100mm wafer growth capability. The novelty of this process was the use of dimeric phosphorus generated from a gallium phosphide (GaP) decomposition source which permitted growth at fairly low temperature (420 o C) while conserving extremely high quality materials. Thermal stability studies were then performed on the heavily doped HBTs using postgrowth annealing in an N2 ambient. The devices were annealed over a temperature range of 350-550 o C for 15 minutes prior to fabrication. The relatively low growth temperature of ~420 o C and the use of stoichiometric conditions for both the arsenides and phosphide materials produced remarkably thermally stable, high-gain SHBTs and DHBTs up to annealing temperatures of 550 o .
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(Paper)
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DOI
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17 Jun 2004
Last modified
17 Feb 2016 13:58
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Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:58
URI
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