Abstract

This paper presents a nonlinear circuit simulation model for III-V Heterojunction Bipolar Transistors (HBTs), implemented using C code in the Agilent ADS circuit simulator as a User Compiled Model (UCM). The UCM is based-on a recently developed compact large-signal model, which includes all physical effects taking place in power III-V based HBT devices. The validity and the accuracy of the UCM are assessed by comparing its simulation results to both measurements and Symbolically Define Device (SDD) simulations in DC, multibias small-signal S-parameters and large-signal microwave power characteristics for a 2x20 m2 emitter area InGaP/GaAs transistor.