Ballistic devices based on T-Branch Junctions and YBranch Junctions on GaInAs/AlInAs heterostructures

Galloo, J.S. ; Roelens, Y. ; Bollaert, S. ; Pichonat, E. ; Wallart, X. ; Cappy, A. ; Mateos, J. (2004) Ballistic devices based on T-Branch Junctions and YBranch Junctions on GaInAs/AlInAs heterostructures. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

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Abstract

We present processes for building passive and active ballistic devices. A 2D Monte Carlo simulator was used to optimize these devices. We present also the study of the transition between ballistic and ohmic transport in T-Branch Junctions (TBJs) at room temperature by using DC characterization. Then we show experimental results for YBranch Junctions (YBJs) compared with Monte Carlo Simulations.

Abstract

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