Diamond for High Power / High Temperature Electronics

Kohn, E. ; Kubovic, M. ; Hernandez-Guillen, F. ; Denisenko, A. (2004) Diamond for High Power / High Temperature Electronics. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

Diamond is a wide bandgap semiconductor with extremely attractive properties but also many technological difficulties. Doping is restricted to deep impurities and substrate size is very limited. Nevertheless in proof of concept experiments, the potential for high power, high temperature and high frequency applications can already well be estimated. In addition, first passive MEMS elements for advanced circuit applications have also been demonstrated, however still on nano-crystalline material, which is available with large surface area. Thus it is already possible to discuss an integrated systems approach when single crystal substrates in wafer size become available.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Kohn, E.
Kubovic, M.
Hernandez-Guillen, F.
Denisenko, A.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Giu 2005
Ultima modifica
17 Feb 2016 14:16
URI

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