Improvement in ACLR Asymmetry forW-CDMA InGaP/GaAs HBT Power Amplifier

Kimura, Koichi ; Seki, Masato ; Matsumura, Nobuhisa ; Honjo, Kazuhiko (2004) Improvement in ACLR Asymmetry forW-CDMA InGaP/GaAs HBT Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre.
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Abstract

Asymmetry in Adjacent Channel Leakage power Ratio (ACLR) has been often observed in high power amplifiers for digital wireless communication systems such as W-CDMA. This paper describes a method for reducing the asymmetry by controlling bias circuit impedance at sub harmonics. By shortening both at 4MHz and 8MHz at the bias circuits, an 8.37-dB ACLR asymmetry could be suppressed to a 5.05-dB ACLR asymmetry, where a 10.5-dB 3rd order Inter Modulation Distortion (IMD3) asymmetry could also be successfully improved to a 1.8-dB IMD3 asymmetry.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Kimura, Koichi
Seki, Masato
Matsumura, Nobuhisa
Honjo, Kazuhiko
Settori scientifico-disciplinari
DOI
Data di deposito
15 Giu 2005
Ultima modifica
17 Feb 2016 14:09
URI

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